Invention Grant
- Patent Title: Method for using a test wafer by forming modified layer using a laser beam and observing damage after forming modified layer
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Application No.: US15220886Application Date: 2016-07-27
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Publication No.: US10249547B2Publication Date: 2019-04-02
- Inventor: Satoshi Kobayashi , Shunsuke Teranishi , Nobumori Ogoshi , Atsushi Ueki , Yuriko Sato , Yasuhiro Shimma
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: DISCO CORPORTATION
- Current Assignee: DISCO CORPORTATION
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain, Ltd.
- Priority: JP2015-157185 20150807
- Main IPC: H01L21/66
- IPC: H01L21/66

Abstract:
Disclosed herein is a using method for a test wafer including a test substrate and a metal foil formed on the front side of the test substrate. The using method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the test substrate from the back side of the test wafer in the condition where the focal point of the laser beam is set inside the test substrate, thereby forming a modified layer inside the test substrate, and a damage detecting step of observing the front side of the test wafer after performing the modified layer forming step, thereby detecting damage to the metal foil.
Public/Granted literature
- US20170040235A1 TEST WAFER AND USING METHOD THEREFOR Public/Granted day:2017-02-09
Information query
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