Invention Grant
- Patent Title: Overlay mark
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Application No.: US16048018Application Date: 2018-07-27
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Publication No.: US10249570B2Publication Date: 2019-04-02
- Inventor: Chen-Yu Chen , Ming-Feng Shieh , Ching-Yu Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L29/06 ; G03F7/20 ; H01L21/302 ; H01L29/78

Abstract:
An overlay mark includes a first feature of a plurality of first alignment segments extending along a first direction in a first layer, a second feature of a plurality of second alignment segments extending along a second direction in a second layer over the first layer, and a third feature of a plurality of third alignment segments extending along the first direction and a plurality of fourth alignment segments extending along the second direction in a third layer over the second layer. In a plan view, each first alignment segment of the plurality of first alignment segments is adjacent to a corresponding third alignment segment of the plurality of third alignment segments along the first direction, and each second alignment segment of the plurality of second alignment segments is adjacent to a corresponding forth alignment segment of the plurality of fourth alignment segments along the second direction.
Public/Granted literature
- US20180350750A1 OVERLAY MARK Public/Granted day:2018-12-06
Information query
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