Invention Grant
- Patent Title: Method for manufacturing a seal ring structure to avoid delamination defect
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Application No.: US15650687Application Date: 2017-07-14
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Publication No.: US10249574B2Publication Date: 2019-04-02
- Inventor: Long Ling
- Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Applicant Address: CN Shanghai
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN Shanghai
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN201510255840 20150519
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/78 ; H01L21/76 ; H01L23/532 ; H01L21/768 ; H01L23/58
Abstract:
A method for manufacturing a semiconductor device includes providing a semiconductor substrate, forming a plurality of integrated circuit (IC) devices on the semiconductor substrate, and forming a seal ring structure surrounding each of the IC devices. Forming the seal ring structure includes forming a plurality of interlayer dielectric layers on the semiconductor substrate, and forming a plurality of hollow through-hole structures within each of the interlayer dielectric layers.
Public/Granted literature
- US20170317037A1 METHOD FOR MANUFACTURING A SEAL RING STRUCTURE TO AVOID DELAMINATION DEFECT Public/Granted day:2017-11-02
Information query
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