Invention Grant
- Patent Title: Stacked substrate inductor
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Application No.: US15190158Application Date: 2016-06-22
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Publication No.: US10249580B2Publication Date: 2019-04-02
- Inventor: Daeik Daniel Kim , Changhan Hobie Yun , David Francis Berdy , Chengjie Zuo , Mario Francisco Velez , Jonghae Kim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C./Qualcomm
- Main IPC: H01L23/64
- IPC: H01L23/64 ; H01F41/04 ; H01L23/522 ; H01L23/498 ; H01L23/538 ; H01L25/16 ; H01L27/08

Abstract:
In conventional device packages, separate standalone inductors are provided and mounted on an interposer substrate along with a die. Separate inductors reduce integration density, decrease flexibility, increase footprint, and generally increase costs. To address such disadvantages, it is proposed to provide a part of an inductor in a substrate below a die. The proposed stacked substrate inductor may include a first inductor in a first substrate, a second inductor in a second a second substrate stacked on the first substrate, and an inductor interconnect coupling the first and second inductors. The core regions of the first and second inductors may overlap with each other at least partially. The proposed stacked substrate inductor may enhance integration density, increase flexibility, decrease footprint, and/or reduce costs.
Public/Granted literature
- US20170373025A1 STACKED SUBSTRATE INDUCTOR Public/Granted day:2017-12-28
Information query
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