An integrated circuit product includes a silicon-on-insulator (SOI) substrate and a flash memory device positioned in a first area of the SOI substrate. The SOI substrate includes a semiconductor bulk substrate, a buried insulating layer positioned above the semiconductor bulk substrate, and a semiconductor layer positioned above the buried insulating layer, and the flash memory device includes a flash transistor device and a read transistor device. The flash transistor device includes a floating gate, an insulating layer positioned above the floating gate, and a control gate positioned above the insulating layer, wherein the floating gate includes a portion of the semiconductor layer. The read transistor device includes a gate dielectric layer positioned above the semiconductor bulk substrate and a read gate electrode positioned above the gate dielectric layer.