Invention Grant
- Patent Title: Semiconductor memory device and method for manufacturing same
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Application No.: US15258566Application Date: 2016-09-07
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Publication No.: US10249641B2Publication Date: 2019-04-02
- Inventor: Takashi Hirotani , Minori Kajimoto
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L49/02
Abstract:
A semiconductor memory device according to one embodiment includes a substrate, a stacked body provided on a first-direction side of the substrate, a semiconductor member extending in the first direction, and a charge storage film provided between the stacked body and the semiconductor member. The stacked body includes first insulating films and electrode films stacked alternately along the first direction. A recess is made in a surface of the stacked body facing the semiconductor member every one of the electrode films.
Public/Granted literature
- US20170236827A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2017-08-17
Information query
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