Invention Grant
- Patent Title: Solid-state imaging device and method of manufacturing solid-state imaging device
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Application No.: US12805090Application Date: 2010-07-12
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Publication No.: US10249665B2Publication Date: 2019-04-02
- Inventor: Yuichi Yamamoto , Hayato Iwamoto
- Applicant: Yuichi Yamamoto , Hayato Iwamoto
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Michael Best & Friedrich LLP
- Priority: JP2003-386933 20031117
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L27/146 ; H01L21/768 ; H01L23/48
Abstract:
A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.
Public/Granted literature
- US20100301439A1 Solid-state imaging device and method of manufacturing solid-state imaging device Public/Granted day:2010-12-02
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