A CMOS pixel including a photodiode having a terminal connected to a potential GND and another terminal connected to a sense node by a first MOS transistor; a second MOS transistor connecting the sense node to a potential VDDH; and a third MOS transistor having its gate connected to the sense node, the transistors having a same gate insulator thickness, wherein the third transistor has a gate length and/or width smaller than those of the first and second transistors, wherein difference VDDH-GND is greater than the nominal voltage of the third MOS transistor, and wherein the body or drain region of the third transistor is connected to a potential VL between potentials VDDH and GND.