Invention Grant
- Patent Title: Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator
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Application No.: US15891960Application Date: 2018-02-08
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Publication No.: US10249718B2Publication Date: 2019-04-02
- Inventor: Tatsuo Shimizu , Masayasu Miyata , Hirotaka Nishino , Yoshihiko Moriyama , Yuichiro Mitani
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2017-085422 20170424
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L29/66 ; H01L29/36 ; H01L21/04 ; H01L29/78 ; H01L29/872 ; H01L29/868 ; H01L29/45 ; H01L29/08 ; H01L29/10 ; H01L29/167 ; H01L29/417
Abstract:
A semiconductor device according to an embodiment includes a metal layer; an n-type first silicon carbide region; and a second silicon carbide region of metal containing at least one element selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt) and positioned between the metal layer and the first silicon carbide region.
Public/Granted literature
Information query
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