Invention Grant
- Patent Title: Silicon germanium-on-insulator formation by thermal mixing
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Application No.: US15237260Application Date: 2016-08-15
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Publication No.: US10249737B2Publication Date: 2019-04-02
- Inventor: Stephen W. Bedell , Joel P. De Souza , Jeehwan Kim , Devendra K. Sadana
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent L. Jeffrey Kelly, Esq.
- Main IPC: H01L21/324
- IPC: H01L21/324 ; H01L21/762 ; H01L29/16 ; H01L29/66 ; H01L29/161 ; H01L29/786 ; H01L21/02 ; H01L21/228 ; H01L21/24 ; H01L21/288 ; H01L29/10 ; H01L29/78 ; H01L21/265 ; H01L29/775
Abstract:
A layer of amorphous silicon is formed on a germanium-on-insulator substrate, or a layer of germanium is formed on a silicon-on-insulator substrate. An anneal is then performed which causes thermal mixing of silicon and germanium atoms within one of the aforementioned structures and subsequent formation of a silicon germanium-on-insulator material.
Public/Granted literature
- US20160359023A1 SILICON GERMANIUM-ON-INSULATOR FORMATION BY THERMAL MIXING Public/Granted day:2016-12-08
Information query
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