Invention Grant
- Patent Title: Nitride semiconductor device
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Application No.: US15695904Application Date: 2017-09-05
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Publication No.: US10249748B2Publication Date: 2019-04-02
- Inventor: Ryo Kajitani , Daisuke Shibata , Kenichiro Tanaka , Masahiro Ishida , Tetsuzo Ueda
- Applicant: PANASONIC CORPORATION
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2015-048694 20150311
- Main IPC: H01L29/72
- IPC: H01L29/72 ; H01L29/778 ; H01L29/808 ; H01L29/812 ; H01L29/08 ; H01L29/10 ; H01L29/20
Abstract:
A nitride semiconductor device includes: a substrate of a first conductivity type having a first surface and a second surface on a side of the substrate opposite the first surface; a first nitride semiconductor layer of the first conductivity type which is disposed on the first surface of the substrate and includes an acceptor impurity; a second nitride semiconductor layer of a second conductivity type disposed on the first nitride semiconductor layer, the second conductivity type being opposite to the first conductivity type; a first electrode disposed on the second surface of the substrate; a second electrode disposed on the first nitride semiconductor layer; and a gate electrode disposed on the second nitride semiconductor layer.
Public/Granted literature
- US20170365698A1 NITRIDE SEMICONDUCTOR DEVICE Public/Granted day:2017-12-21
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