Invention Grant
- Patent Title: Transistor with asymmetric source/drain overlap
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Application No.: US16016454Application Date: 2018-06-22
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Publication No.: US10249755B1Publication Date: 2019-04-02
- Inventor: Kangguo Cheng , Peng Xu , Heng Wu , Zhenxing Bi
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Otterstedt, Ellenbogen & Kammer, LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/336 ; H01L29/08 ; H01L29/10 ; H01L29/417 ; H01L21/311 ; H01L21/3105 ; H01L21/306 ; H01L21/02
Abstract:
An asymmetric field-effect transistor having different gate-to-source and gate-to-drain overlaps allows lower parasitic capacitance on the drain side of the device and lower resistance on the source side. Source and drain regions having different configurations can be formed simultaneously using the same precursor materials.
Information query
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