Invention Grant
- Patent Title: High quality AlSb for radiation detection
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Application No.: US15424464Application Date: 2017-02-03
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Publication No.: US10249780B1Publication Date: 2019-04-02
- Inventor: Ganesh Balakrishnan , Adam Alexander Hecht , Erin Ivey Vaughan
- Applicant: STC.UNM
- Applicant Address: US NM Albuquerque
- Assignee: STC.UNM
- Current Assignee: STC.UNM
- Current Assignee Address: US NM Albuquerque
- Agency: MH2 Technology Law Group, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/08 ; H01L31/18 ; H01L31/0304 ; H01L31/0216 ; H01L31/0392
Abstract:
Provided is a method of making a radiation detector, including: growing a thin film on a substrate. The substrate is a silicon substrate. The thin film includes aluminum antimony alloy (AlSb). The growing is epitaxial growth via ultra-high vacuum molecular beam epitaxy (UHV-MBE).
Information query
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