Invention Grant
- Patent Title: High voltage photovoltaics integrated with light emitting diode containing zinc oxide containing layer
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Application No.: US15468759Application Date: 2017-03-24
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Publication No.: US10249782B2Publication Date: 2019-04-02
- Inventor: Stephen W. Bedell , Ning Li , Devendra K. Sadana , Ghavam G. Shahidi
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Erik Johnson
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L33/00 ; H01L33/06 ; H01L33/32 ; H01L31/153 ; H01L31/0352 ; H01L31/0735

Abstract:
An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials. A zinc oxide interface layer is present between the LED and the photovoltaic device. The zinc oxide layers or can also form a LED.
Public/Granted literature
- US20180277704A1 HIGH VOLTAGE PHOTOVOLTAICS INTEGRATED WITH LIGHT EMITTING DIODE CONTAINING ZINC OXIDE CONTAINING LAYER Public/Granted day:2018-09-27
Information query
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