Invention Grant
- Patent Title: Transparent electron blocking hole transporting layer
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Application No.: US15882113Application Date: 2018-01-29
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Publication No.: US10249793B2Publication Date: 2019-04-02
- Inventor: John E. Northrup , Christopher L. Chua
- Applicant: Palo Alto Research Center Incorporated
- Applicant Address: US CA Palo Alto
- Assignee: Palo Alto Research Center Incorporated
- Current Assignee: Palo Alto Research Center Incorporated
- Current Assignee Address: US CA Palo Alto
- Agency: Hollingsworth Davis, LLC
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L33/06 ; H01L33/38 ; H01L33/40 ; H01L33/62 ; H01L33/14 ; H01L33/42 ; H01L33/20

Abstract:
A light emitting diode includes an active region configured to emit light, a composite electrical contact layer, and a transparent electron blocking hole transport layer (TEBHTL). The composite electrical contact layer includes tow materials. At least one of the two materials is a metal configured to reflect a portion of the emitted light. The TEBHTL is arranged between the composite electrical contact layer and the active region. The TEBHTL has a thickness that extends at least a majority of a distance between the active region and the composite electrical contact layer. The TEBHTL has a band-gap greater than a band-gap of light emitting portions of the active region. The band-gap of the TEBHTL decreases as a function of distance from the active region to the composite electrical contact layer over a majority of the thickness of the TEBHTL.
Public/Granted literature
- US20180158990A1 TRANSPARENT ELECTRON BLOCKING HOLE TRANSPORTING LAYER Public/Granted day:2018-06-07
Information query
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