Invention Grant
- Patent Title: Elastic wave device, high-frequency front end circuit, and communication apparatus
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Application No.: US15702827Application Date: 2017-09-13
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Publication No.: US10250226B2Publication Date: 2019-04-02
- Inventor: Mari Saji
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Keating & Bennett, LLP
- Priority: JP2016-227747 20161124
- Main IPC: H03H9/25
- IPC: H03H9/25 ; H03H9/02 ; H03H9/145 ; H01L41/047 ; H01L41/053 ; H01Q23/00

Abstract:
An elastic wave device includes a piezoelectric substrate, an IDT electrode including a first electrode layer which is provided on the piezoelectric substrate and contains Pt as a main component and a second electrode layer which is laminated on the first electrode layer and contains Cu as a main component, and a dielectric film that is provided on the piezoelectric substrate and covers the IDT electrode. The piezoelectric substrate is made of lithium niobate. The dielectric film is made of silicon oxide. The elastic wave device uses Rayleigh waves propagating along the piezoelectric substrate.
Public/Granted literature
- US20180145658A1 ELASTIC WAVE DEVICE, HIGH-FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION APPARATUS Public/Granted day:2018-05-24
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