Invention Grant
- Patent Title: Manufacturing method of semiconductor device
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Application No.: US15939563Application Date: 2018-03-29
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Publication No.: US10252454B2Publication Date: 2019-04-09
- Inventor: Itaru Matsuo
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2017-071814 20170331
- Main IPC: H01L21/56
- IPC: H01L21/56 ; B29C45/76 ; B29C45/17 ; H01L23/31 ; H01L23/495 ; B29C45/14 ; B29L31/34

Abstract:
A manufacturing method of a semiconductor device includes the steps of: preparing a lead frame; mounting a plurality of semiconductor chips on the lead frame; and sealing one portion of the lead frame with a sealing resin. The resin-sealing step includes the step of: disposing the lead frame, molds having main surfaces on which cavity parts are formed, the lead frame being disposed on the main surface of the heated molds; injecting a resin in the main surfaces of the heated molds so as to seal the one portion of the lead frame with the sealing resin; and taking out the lead frame from the heated molds. In the taking-out step, while the lead frame is taken out, the main surfaces of the molds are inspected by using a sensor, and the sensor is cooled and formed integrally with an arm used for taking out the lead frame.
Public/Granted literature
- US20180281255A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2018-10-04
Information query
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