- Patent Title: Single-crystal pulling apparatus and single-crystal pulling method
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Application No.: US15758023Application Date: 2016-08-23
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Publication No.: US10253425B2Publication Date: 2019-04-09
- Inventor: Kiyotaka Takano
- Applicant: SHIN-ETSU HANDOTAI CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU HANDOTAI CO., LTD.
- Current Assignee: SHIN-ETSU HANDOTAI CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2015-185654 20150918
- International Application: PCT/JP2016/003827 WO 20160823
- International Announcement: WO2017/047008 WO 20170323
- Main IPC: C30B15/30
- IPC: C30B15/30 ; C30B15/00 ; C30B29/06 ; C30B15/14 ; C30B30/04 ; H01F6/04 ; H01F6/06 ; C30B29/42

Abstract:
A single-crystal pulling apparatus including a pulling furnace containing a crucible containing molten single crystal material, and a magnetic field generation device that is arranged around the furnace, has superconducting coils, and generates a magnetic field distribution. A magnetic flux density distribution on an X axis, which is a direction of magnetic force lines at the central axis in a horizontal plane, is a convex upward distribution, and a magnetic flux density on the X axis becomes 80% or less of a magnetic flux density set value at a crucible wall. Simultaneously, a magnetic flux density distribution on a Y axis, orthogonal to the X axis, is a convex downward distribution, and a magnetic flux density on the Y axis becomes 140% or more of the set value at the crucible wall when the magnetic flux density at the central axis in the horizontal plane is the set value.
Public/Granted literature
- US20180237940A1 SINGLE-CRYSTAL PULLING APPARATUS AND SINGLE-CRYSTAL PULLING METHOD Public/Granted day:2018-08-23
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