Invention Grant
- Patent Title: Epitaxial growth apparatus and method of manufacturing a semiconductor device
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Application No.: US15239190Application Date: 2016-08-17
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Publication No.: US10253427B2Publication Date: 2019-04-09
- Inventor: Shinji Miyazaki
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2016-071214 20160331
- Main IPC: C30B25/14
- IPC: C30B25/14 ; C23C16/44 ; C23C16/455
Abstract:
According to one embodiment, an epitaxial growth apparatus includes a processing chamber, an exhaust pipe, and an introducing pipe. The exhaust pipe is communicated with the processing chamber. The introducing pipe is communicated with the exhaust pipe and an alkaline gas is introduced into the exhaust pipe via the introducing pipe.
Public/Granted literature
- US10151047B2 Epitaxial growth apparatus and method of manufacturing a semiconductor device Public/Granted day:2018-12-11
Information query
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