A silicon carbide single crystal includes a spiral dislocation. The spiral dislocation includes a L dislocation having a burgers vector defined as b, which satisfies an equation of b> +1/3 . The L dislocation has a density equal to or lower than 300 dislocations/cm2, preferably, 100 dislocations/cm2, since the L dislocation has large distortion and causes generation of leakage current. Thus, the silicon carbide single crystal with high quality is suitable for a device production which can suppress the leakage current.