Invention Grant
- Patent Title: Semiconductor pressure sensor
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Application No.: US15022731Application Date: 2014-10-03
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Publication No.: US10254184B2Publication Date: 2019-04-09
- Inventor: Naoki Takayama , Michikazu Tomita , Yuki Suto , Satoshi Okude
- Applicant: FUJIKURA LTD.
- Applicant Address: JP Tokyo
- Assignee: FUJIKURA LTD.
- Current Assignee: FUJIKURA LTD.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2013-209568 20131004; JP2014-045705 20140307
- International Application: PCT/JP2014/076551 WO 20141003
- International Announcement: WO2015/050247 WO 20150409
- Main IPC: G01L19/04
- IPC: G01L19/04 ; G01L19/14 ; G01L9/00 ; G01L9/02 ; G01L19/00 ; G01L19/06 ; H01L23/053 ; H01L23/16 ; H01L23/495 ; H01L23/498 ; H01L23/00

Abstract:
A semiconductor pressure sensor of the invention, includes: a base body (1) including: a lead frame (4) having a first surface and a second surface; and a support (5) that supports the lead frame (4) and is made of a resin; a pressure sensor chip (2) provided on the first surface of the lead frame (4); and a controller (3) that is provided on the second surface of the lead frame (4), is implanted in the support (5), is formed in the shape having a plurality of surfaces, includes a stress relief layer (32, 33, 34, 35, 36) that is formed on at least one of the plurality of surfaces and has a Young's modulus lower than that of the support (5), and receives a sensor signal output from the pressure sensor chip (2) aid thereby outputs a pressure detection, the pressure sensor chip (2) at least partially overlapping the controller (3) in plan view.
Public/Granted literature
- US20160209284A1 SEMICONDUCTOR PRESSURE SENSOR Public/Granted day:2016-07-21
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