Invention Grant
- Patent Title: Semiconductor detector
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Application No.: US15776809Application Date: 2015-11-19
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Publication No.: US10254417B2Publication Date: 2019-04-09
- Inventor: Satoshi Tokuda , Toshinori Yoshimuta , Hiroyuki Kishihara , Yukihisa Wada
- Applicant: Shimadzu Corporation
- Applicant Address: JP Kyoto
- Assignee: Shimadzu Corporation
- Current Assignee: Shimadzu Corporation
- Current Assignee Address: JP Kyoto
- Agency: Maier & Maier, PLLC
- International Application: PCT/JP2015/082605 WO 20151119
- International Announcement: WO2017/085842 WO 20170526
- Main IPC: G01T1/24
- IPC: G01T1/24 ; G01T1/20 ; G01T7/00 ; H01L27/146 ; H01L31/108

Abstract:
In a radiation detector, a Schottky electrode is formed such that an interdiffusion coefficient between the material of an outermost surface electrode formed on the Schottky electrode and the material of the Schottky electrode is smaller than an interdiffusion coefficient between the material of the outermost surface electrode and Al (aluminum). Consequently, the material of the outermost surface electrode does not diffuse into the Schottky electrode, and Schottky functions can be maintained, and at the same time, the material of the Schottky electrode does not diffuse into the outermost surface electrode, and the outermost surface electrode can be prevented from alloying.
Public/Granted literature
- US20180329081A1 SEMICONDUCTOR DETECTOR Public/Granted day:2018-11-15
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