Invention Grant
- Patent Title: Highly efficent on-chip direct electronic-plasmonic transducers
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Application No.: US15445408Application Date: 2017-02-28
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Publication No.: US10254479B2Publication Date: 2019-04-09
- Inventor: Wei Du , Tao Wang , Christian Albertus Nijhuis
- Applicant: National University of Singapore
- Applicant Address: SG Singapore
- Assignee: National University of Singapore
- Current Assignee: National University of Singapore
- Current Assignee Address: SG Singapore
- Agency: Cesari and McKenna, LLP
- Agent James A. Blanchette
- Priority: SG10201601530U 20160301
- Main IPC: G02B6/00
- IPC: G02B6/00 ; G02B6/122 ; G01J1/42 ; B82Y15/00 ; G02B6/12

Abstract:
In one embodiment, an on-chip electronic-plasmonic transducer is provided that is capable of both direct plasmon generation and detection at high efficiencies. The electronic-plasmonic transducer includes a metal-insulator-metal junction formed from a first wire constructed of a first metal, a tunneling barrier material in contact with the first wire, and a second wire made from a second metal in contact with the tunneling barrier material. A plasmonic waveguide is formed as a contiguous part of the second wire, such that the waveguide is directly coupled to the MIM junction. The electronic-plasmonic transducer can both directly generate and detect plasmons, such that it may be configured on-chip as either a plasmon source or a plasmon detector. The electronic-plasmonic transducer may be used to form an on-chip plasmon-based frequency multiplier or plasmon amplifier, among other usages.
Public/Granted literature
- US20170254952A1 HIGHLY EFFICENT ON-CHIP DIRECT ELECTRONIC-PLASMONIC TRANSDUCERS Public/Granted day:2017-09-07
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