Invention Grant
- Patent Title: Approach to lowering extreme ultraviolet exposure dose for inorganic hardmasks for extreme ultraviolet patterning
-
Application No.: US16050866Application Date: 2018-07-31
-
Publication No.: US10254652B2Publication Date: 2019-04-09
- Inventor: Ekmini A. De Silva , Karen E. Petrillo , Indira P. Seshadri
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/16 ; B82Y40/00 ; H01L21/3213 ; G03F7/20 ; H01L21/027 ; G03F7/09 ; G03F7/11

Abstract:
An extreme ultraviolet lithography pattern stack, including, an inorganic hardmask layer, an under layer on the inorganic hardmask layer, and a resist layer on the under layer, where the inorganic hardmask layer, under layer, and resist layer have a combined thickness in the range of about 8.5 nm to about 70 nm.
Public/Granted literature
Information query
IPC分类: