Invention Grant
- Patent Title: Temperature control method, control apparatus, and plasma processing apparatus
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Application No.: US14354649Application Date: 2012-10-30
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Publication No.: US10254774B2Publication Date: 2019-04-09
- Inventor: Tatsuya Miura , Wataru Ozawa , Kimihiro Fukasawa , Kazunori Kazama
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2011-244539 20111108
- International Application: PCT/JP2012/078077 WO 20121030
- International Announcement: WO2013/069510 WO 20130516
- Main IPC: G05D23/00
- IPC: G05D23/00 ; G05D23/19 ; H01L21/67 ; H01L21/683 ; H01J37/32

Abstract:
A temperature control method is provided for controlling a plasma processing apparatus that is capable of changing a temperature setting for each step of a plasma process including multiple steps. The method includes a transfer step of performing an entry process for transferring a workpiece into a processing chamber of the plasma processing apparatus and/or an exit process for transferring the workpiece out of the processing chamber, a process execution step of executing the plasma process including multiple steps, and a temperature control step of performing a first temperature control and/or a second temperature control. The first temperature control includes controlling a temperature to a temperature setting of a next process according to a time execution of the plasma process is completed, and the second temperature control includes controlling the temperature to the temperature setting of the next process in parallel with the entry process and/or the exit process.
Public/Granted literature
- US20140288726A1 TEMPERATURE CONTROL METHOD, CONTROL APPARATUS, AND PLASMA PROCESSING APPARATUS Public/Granted day:2014-09-25
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