Invention Grant
- Patent Title: Power reduction technique during write bursts
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Application No.: US15824535Application Date: 2017-11-28
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Publication No.: US10255967B1Publication Date: 2019-04-09
- Inventor: Harish N. Venkata
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/4093 ; G11C7/10 ; G11C16/30 ; G11C29/02 ; G11C11/56

Abstract:
A memory device may include voltage regulation circuitry configured to supply a voltage signal between a high signal and a low signal. The memory device may include a first data line configured to provide a first charge to the voltage regulation circuitry during a first mode of operation of the memory device. The memory device may include a second data line configured to draw a second charge from the voltage regulation circuitry to control a voltage on the second data line during a second mode of operation of the memory device.
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