Invention Grant
- Patent Title: Sensing circuit and memory using thereof
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Application No.: US16214352Application Date: 2018-12-10
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Publication No.: US10255976B1Publication Date: 2019-04-09
- Inventor: Albert Lee , Hochul Lee , Kang-Lung Wang
- Applicant: INSTON INC.
- Applicant Address: US CA Los Angeles
- Assignee: INSTON INC.
- Current Assignee: INSTON INC.
- Current Assignee Address: US CA Los Angeles
- Agency: Li & Cai Intellectual Property (USA) Office
- Main IPC: G11C7/14
- IPC: G11C7/14 ; G11C13/00

Abstract:
A sensing circuit includes a first sensing terminal, a second sensing terminal, a second grounding terminal, and a second grounding terminal. The first sensing terminal is connected to a source electrode of a transistor of a memory macro through a bit line. The second sensing terminal is electrically connected to a drain electrode of the transistor of the memory marco through a resistive memory device to a source line, and is not continuously connected to the grounding voltage. The first grounding terminal is used as a reference voltage of a voltage of the first sensing terminal. The second grounding terminal is used as a reference voltage of a voltage of the second sensing terminal. The sensing circuit outputs a sensing signal according to a voltage difference between the first sensing terminal and the second sensing terminal.
Public/Granted literature
- US20190108879A1 SENSING CIRCUIT AND MEMORY USING THEREOF Public/Granted day:2019-04-11
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