Invention Grant
- Patent Title: Semiconductor device and method of controlling the semiconductor device
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Application No.: US15914848Application Date: 2018-03-07
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Publication No.: US10255984B2Publication Date: 2019-04-09
- Inventor: Kotaro Sakumura , Yasutaka Horikoshi , Hiroshi Tachibana , Keita Kashima
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC.
- Priority: JP2017-100756 20170522
- Main IPC: G11C19/28
- IPC: G11C19/28 ; H01L21/822 ; H01L23/50 ; G11C16/30 ; G11C5/14 ; G11C11/56 ; H01L27/04

Abstract:
A malfunction caused by sharp fluctuations in current is prevented while suppressing an increase in circuit size. A semiconductor device includes a plurality of modules. The semiconductor device includes: a table that stores a plurality of operating frequencies in each of the modules and a plurality of scores determined based on the operating frequencies such that the operating frequencies and the scores are associated with each other for each of the modules; a score specifying unit that acquires the clock operating frequencies of the modules and specifies the scores based on the clock operating frequencies with reference to the table; and an output unit that outputs an instruction to activate the modules at different times if the specified scores exceed a predetermined threshold value.
Public/Granted literature
- US20180336956A1 SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING THE SEMICONDUCTOR DEVICE Public/Granted day:2018-11-22
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