Invention Grant
- Patent Title: Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process
-
Application No.: US14204045Application Date: 2014-03-11
-
Publication No.: US10256090B2Publication Date: 2019-04-09
- Inventor: Rachael L. Myers-Ward , David Kurt Gaskill , Charles R. Eddy, Jr. , Robert E. Stahlbush , Nadeemmullah A. Mahadik , Virginia D. Wheeler
- Applicant: Rachael L. Myers-Ward , David Kurt Gaskill , Charles R. Eddy, Jr. , Robert E. Stahlbush , Nadeemmullah A. Mahadik , Virginia D. Wheeler
- Applicant Address: US DC Washington
- Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Joseph T. Grunkemeyer
- Main IPC: C03C15/00
- IPC: C03C15/00 ; H01L21/02 ; C30B25/18 ; C30B25/20 ; C30B29/36 ; H01L29/16 ; H01L21/3065
Abstract:
A method of: providing an off-axis silicon carbide substrate, and etching the surface of the substrate with a dry gas, hydrogen, or an inert gas.
Public/Granted literature
- US20140190399A1 REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-SITU ETCH PROCESS Public/Granted day:2014-07-10
Information query
