Invention Grant
- Patent Title: Selective area growth of semiconductors using patterned sol-gel materials
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Application No.: US15362420Application Date: 2016-11-28
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Publication No.: US10256093B2Publication Date: 2019-04-09
- Inventor: Emily L. Warren , Adele Clare Tamboli
- Applicant: Alliance for Sustainable Energy, LLC
- Applicant Address: US CO Golden
- Assignee: Alliance for Sustainable Energy, LLC
- Current Assignee: Alliance for Sustainable Energy, LLC
- Current Assignee Address: US CO Golden
- Agent Sam J. Barkley
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
Systems and methods for growing semiconductor materials on substrates by using patterned sol-gel materials are provided. According to a first aspect of the invention, a method includes forming a pattern of a sol-gel material on a first region of substrate, and depositing a semiconductor material on a second region of the substrate by selective area growth. The second region is adjacent to the first region.
Public/Granted literature
- US20170154771A1 SELECTIVE AREA GROWTH OF SEMICONDUCTORS USING PATTERNED SOL-GEL MATERIALS Public/Granted day:2017-06-01
Information query
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