Invention Grant
- Patent Title: Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structure
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Application No.: US15846591Application Date: 2017-12-19
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Publication No.: US10256097B2Publication Date: 2019-04-09
- Inventor: Ravi Keshav Joshi , Romain Esteve , Roland Rupp , Francisco Javier Santos Rodriguez , Gerald Unegg
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102016125030 20161220
- Main IPC: H01L21/04
- IPC: H01L21/04 ; H01L29/06 ; H01L29/10 ; H01L29/45 ; H01L29/66 ; H01L29/732 ; H01L29/808 ; H01L29/861 ; H01L29/417 ; H01L29/423 ; H01L29/08 ; H01L29/78 ; H01L29/16 ; H01L29/739
Abstract:
A semiconductor device includes a silicon carbide semiconductor body and a metal contact structure. Interface particles including a silicide kernel and a carbon cover on a surface of the silicide kernel are formed directly between the silicon carbide semiconductor body and the metal contact structure. Between neighboring ones of the interface particles, the metal contact structure directly adjoins the silicon carbide semiconductor body.
Public/Granted literature
- US20180174840A1 Forming a Metal Contact Layer on Silicon Carbide and Semiconductor Device with Metal Contact Structure Public/Granted day:2018-06-21
Information query
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