- Patent Title: Manufacturing method and wiring substrate with through electrode
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Application No.: US15568541Application Date: 2016-04-25
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Publication No.: US10256117B2Publication Date: 2019-04-09
- Inventor: Shun Mitarai , Shusaku Yanagawa , Hiroshi Ozaki
- Applicant: SONY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sheridan Ross P.C.
- Priority: JP2015-093877 20150501
- International Application: PCT/JP2016/002175 WO 20160425
- International Announcement: WO2016/178311 WO 20161110
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/48 ; H01L23/498 ; H05K3/42 ; H01L21/683 ; H05K1/03 ; H05K3/46 ; H01L21/288 ; H01L23/00
Abstract:
There is provided a method for manufacturing a wiring substrate with a through electrode, the method including providing a device substrate having a through hole, an opening of the through hole being blocked by a current supply path and the wiring substrate including the device substrate as a core layer with the through electrode; and disposing a first metal in the through hole to form the through electrode by electroplating, in a depth direction of the through hole, using the current supply path.
Public/Granted literature
- US20180158695A1 MANUFACTURING METHOD AND WIRING SUBSTRATE WITH THROUGH ELECTRODE Public/Granted day:2018-06-07
Information query
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