The present disclosure describes a method of forming a replacement contact. For example, the replacement contact can include a metal with one or more first sidewall surfaces and a top surface. A first dielectric can be formed to abut the one or more first sidewall surfaces of the metal. A second dielectric can be formed over the first dielectric and the top surface of the metal. An opening in the second dielectric can be formed. A metal oxide structure can be selectively grown on the top surface of the metal, where the metal oxide structure has one or more second sidewall surfaces. One or more spacers can be formed to abut the one or more second sidewall surfaces of the metal oxide structure. Further, the metal oxide structure can be removed.