Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US15049352Application Date: 2016-02-22
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Publication No.: US10256173B2Publication Date: 2019-04-09
- Inventor: Jun-Chieh Wu , Yu-Hsiang Chao , Chung-Yao Chang , Chun-Cheng Kuo
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Agent Cliff Z. Liu
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/02 ; H01L23/48 ; H01L23/52 ; H01L21/00 ; H01L23/498 ; H01L23/00 ; H01L21/48 ; H01L21/56 ; H01L23/31 ; H01L25/065 ; H01L23/15 ; H01L23/538

Abstract:
The present disclosure relates to a semiconductor device and a method for manufacturing the same. The semiconductor device includes a substrate, a first package body and at least one connecting element. The substrate has a first surface. The first package body is disposed adjacent to the first surface of the substrate, and defines at least one cavity. The connecting element is disposed adjacent to the first surface of the substrate and in a corresponding cavity. A space is defined between a periphery surface of a portion of the connecting element and a sidewall of a portion of the cavity. An end portion of the connecting element extends beyond an outermost surface of the first package body.
Public/Granted literature
- US20170243813A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2017-08-24
Information query
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