Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US14484414Application Date: 2014-09-12
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Publication No.: US10256184B2Publication Date: 2019-04-09
- Inventor: Kazuhide Abe
- Applicant: Lapis Semiconductor Co., Ltd.
- Applicant Address: JP Yokohama
- Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP Yokohama
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: JP2004-006546 20040114
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/288 ; H01L21/311 ; H01L21/321 ; H01L21/3213 ; H01L21/768 ; H01L23/532
Abstract:
A semiconductor device has a semiconductor substrate, a first insulating film formed on a surface of the semiconductor substrate, a first recess formed in the first insulating film, a first barrier film formed on an inner surface of the first insulating film except a top peripheral region of the first trench, a first conductive film formed in the first trench, and a covering film formed on an upper surface and a top peripheral region of the first conductive film and an upper surface of the first barrier film. The first conductive film includes copper.
Public/Granted literature
- US20140374910A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-12-25
Information query
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