Invention Grant
- Patent Title: Interconnect structure having subtractive etch feature and damascene feature
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Application No.: US15816508Application Date: 2017-11-17
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Publication No.: US10256186B2Publication Date: 2019-04-09
- Inventor: Griselda Bonilla , Samuel S. Choi , Ronald G. Filippi , Elbert E. Huang , Naftali E. Lustig , Andrew H. Simon
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Steven Myers
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/786 ; H01L23/528 ; H01L21/768 ; H01L21/321 ; H01L21/3213 ; H01L21/4763 ; H01L23/532

Abstract:
Methods of forming an interconnect structure include depositing a first conductive material on a substrate. Aspects include subtractively etching the conductive material to form a patterned first conductive layer, and depositing a dielectric layer on interconnect structure. Aspects also include depositing a second conductive material on the dielectric layer and removing the second conductive material through the top of the second metal liner.
Public/Granted literature
- US20180076133A1 INTERCONNECT SCALING Public/Granted day:2018-03-15
Information query
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