Invention Grant
- Patent Title: Semiconductor device with slotted backside metal for improving Q factor
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Application No.: US15594672Application Date: 2017-05-15
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Publication No.: US10256187B2Publication Date: 2019-04-09
- Inventor: Jui-Chieh Chiu , Chih-Wen Huang , You-Cheng Lai
- Applicant: WIN Semiconductors Corp.
- Applicant Address: TW Tao Yuan
- Assignee: WIN Semiconductors Corp.
- Current Assignee: WIN Semiconductors Corp.
- Current Assignee Address: TW Tao Yuan
- Agent Winston Hsu
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L49/02 ; H01L23/66
Abstract:
A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate; a winding structure formed on a top side the semiconductor substrate, wherein the winding structure comprises one or more metal lines winding with respect to a center of the winding structure; and a backside metal formed under a backside of the semiconductor substrate; wherein a hollow slot is formed within the backside metal, and a projection of the winding structure is within the hollow slot.
Public/Granted literature
- US20180331031A1 Semiconductor Device with Slotted Backside Metal for Improving Q Factor Public/Granted day:2018-11-15
Information query
IPC分类:
