Invention Grant
- Patent Title: Memory circuit with thyristor
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Application No.: US15841252Application Date: 2017-12-13
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Publication No.: US10256242B2Publication Date: 2019-04-09
- Inventor: Li-Ping Huang
- Applicant: Etron Technology, Inc.
- Applicant Address: TW Hsinchu
- Assignee: Etron Technology, Inc.
- Current Assignee: Etron Technology, Inc.
- Current Assignee Address: TW Hsinchu
- Agent Winston Hsu
- Main IPC: H01L27/105
- IPC: H01L27/105 ; H01L29/06 ; H01L27/102 ; H01L29/423 ; H01L27/12 ; H01L29/745 ; H01L29/78 ; H01L29/74
Abstract:
A memory circuit with thyristor includes a plurality of memory cells. Each memory cell of the plurality of memory cells includes an access transistor and a thyristor. The thyristor is coupled to the access transistor. At least one of a gate of the access transistor and a gate of the thyristor has a fin structure.
Public/Granted literature
- US20180166445A1 MEMORY CIRCUIT WITH THYRISTOR Public/Granted day:2018-06-14
Information query
IPC分类:
