Solid-state imaging element, imaging device, and electronic apparatus
Abstract:
The present technology relates to a solid-state imaging element, an imaging device, and an electronic apparatus which enable enhancement of focusing accuracy and sensitivity and suppression of color mixing, in a high image height portion. Incident light is condensed by a main lens, and the condensed light is condensed by a plurality of on-chip lenses. The on-chip lenses are each shared by a plurality of photodiodes that receive the light condensed by the on-chip lens and that generate and accumulate electric charges corresponding to the amounts of light. The plurality of photodiodes sharing the on-chip lens are shaped, in accordance with the image height of the on-chip lens, in such a manner as to have substantially uniform light reception characteristics. The present technology is applicable to a CMOS image sensor.
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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L31/00 对红外辐射、光、较短波长的电磁辐射,或微粒辐射敏感的,并且专门适用于把这样的辐射能转换为电能的,或者专门适用于通过这样的辐射进行电能控制的半导体器件;专门适用于制造或处理这些半导体器件或其部件的方法或设备;其零部件(H01L51/42优先;由形成在一共用衬底内或其上的多个固态组件,而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00)
H01L31/04 .用作光伏〔PV〕转换器件(制造中其测试入H01L21/66;制造之后其测试入H02S50/10)
H01L31/06 ..以至少有一个电位跃变势垒或表面势垒为特征的
H01L31/062 ...只是金属—绝缘体—半导体型势垒的
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