Invention Grant
- Patent Title: Efficient metal-insulator-metal capacitor fabrication
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Application No.: US15805829Application Date: 2017-11-07
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Publication No.: US10256289B2Publication Date: 2019-04-09
- Inventor: Kisup Chung , Isabel C. Estrada-Raygoza , Hemanth Jagannathan , Chi-Chun Liu , Yann A. M. Mignot , Hao Tang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L49/02
- IPC: H01L49/02

Abstract:
Methods of forming capacitors include forming a self-assembled pattern of periodic first and second domains using first and second block copolymer materials over a substrate. The second block copolymer material is etched away. Material from the substrate is etched based on a pattern defined by the first block copolymer material to form cavities in the substrate. A capacitor stack is conformally deposited over the substrate, such that the capacitor stack is formed on horizontal surfaces of the substrate and vertical surfaces of the cavities.
Public/Granted literature
- US20180269274A1 EFFICIENT METAL-INSULATOR-METAL CAPACITOR FABRICATION Public/Granted day:2018-09-20
Information query
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