Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15335444Application Date: 2016-10-27
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Publication No.: US10256303B2Publication Date: 2019-04-09
- Inventor: Tatsuya Naito
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JP2015-243077 20151214
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/06 ; H01L29/10 ; H01L29/739 ; H01L29/40 ; H01L29/423
Abstract:
Provided is a semiconductor device including a plurality of dummy trench portions that are provided in a front surface side of a semiconductor substrate and each have provided therein an electrode to which an emitter potential is supplied, and a gate trench portion that is provided in a manner to surround two or more dummy trench portions from among the plurality of dummy trench portions in the front surface side of the semiconductor substrate and has provided therein an electrode to which a gate potential is supplied.
Public/Granted literature
- US20170170273A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-06-15
Information query
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