Invention Grant
- Patent Title: Memory cells having electrically conductive nanodots
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Application No.: US14953698Application Date: 2015-11-30
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Publication No.: US10256309B2Publication Date: 2019-04-09
- Inventor: Nirmal Ramaswamy
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/423
- IPC: H01L29/423 ; B82Y10/00 ; H01L27/11521 ; H01L29/788 ; H01L21/28 ; H01L27/11524
Abstract:
Memory cells having electrically conductive nanodots between a charge storage material and a control gate are useful in non-volatile memory devices and electronic systems.
Public/Granted literature
- US20160093708A1 METHODS OF FORMING MEMORY CELLS Public/Granted day:2016-03-31
Information query
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