Invention Grant
- Patent Title: Thin film transistor, array substrate and their manufacturing methods, and display apparatus
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Application No.: US15311642Application Date: 2016-03-01
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Publication No.: US10256343B2Publication Date: 2019-04-09
- Inventor: Leilei Cheng , Kai Xu , Guangcai Yuan
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Brooks Kushman P.C.
- Priority: CN201510640918 20150930
- International Application: PCT/CN2016/075114 WO 20160301
- International Announcement: WO2017/054407 WO 20170406
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/288 ; H01L29/49 ; H01L29/51 ; H01L27/12 ; H01L21/02 ; G02F1/1333 ; G02F1/1362 ; G02F1/1368

Abstract:
The present disclosure discloses a thin film transistor, an array substrate and their manufacturing methods, and a display apparatus. The method for manufacturing the thin film transistor of the present disclosure comprises a step of forming an insulation layer, wherein the step of forming the insulation layer further comprises forming a siloxane material layer, oxidizing the siloxane material layer such that an inorganic silicon film is formed on a surface of the siloxane material layer, and curing the oxidized siloxane material layer to obtain the insulation layer. In this disclosure, the outer layer of the insulation layer is an inorganic silicon film which is a commonly-used material for making the insulation layer in prior art, and the inner layer of the insulation layer is made of the siloxane material having a low dielectric constant and high chemical stability.
Public/Granted literature
- US20180182895A1 THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND THEIR MANUFACTURING METHODS, AND DISPLAY APPARATUS Public/Granted day:2018-06-28
Information query
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