Invention Grant
- Patent Title: Method of manufacturing thin film transistor and thin film transistor
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Application No.: US15923546Application Date: 2018-03-16
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Publication No.: US10256350B2Publication Date: 2019-04-09
- Inventor: Satoru Utsugi , Shigeru Ishida , Ryouhei Takakura , Yoshiaki Matsushima , Nobutake Nodera , Takao Matsumoto
- Applicant: Sakai Display Products Corporation
- Applicant Address: JP
- Assignee: Sakai Display Products Corporation
- Current Assignee: Sakai Display Products Corporation
- Current Assignee Address: JP
- Agency: St. Onge Steward Johnston & Reens, LLC
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/02 ; H01L21/027 ; H01L21/306 ; H01L29/66

Abstract:
A method of manufacturing a thin film transistor including: forming a gate electrode on a substrate, forming an insulating film, forming a first silicon layer including an amorphous silicon, irradiating a region of the first silicon layer from a part or the whole of a predetermined region of the first silicon layer to an outside of the predetermined region with an energy beam so as to convert a portion of the first silicon layer into a polycrystalline silicon, a first etching step for etching the first silicon layer while leaving the predetermined region, forming a second silicon layer including an amorphous silicon so as to cover the predetermined region, a second etching step for etching the second silicon layer covering the predetermined region while leaving a part of the second silicon layer, the part larger than the predetermined region, and forming a source electrode and a drain electrode.
Public/Granted literature
- US20180204957A1 METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR Public/Granted day:2018-07-19
Information query
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