Invention Grant
- Patent Title: Semiconductor substrate for controlling a strain
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Application No.: US14653249Application Date: 2013-03-20
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Publication No.: US10256368B2Publication Date: 2019-04-09
- Inventor: Jung-Hyun Eum , Kwang-Yong Choi , Jae-Ho Song , Dong-Kun Lee , Kye-Jin Lee , Young-Jae Choi
- Applicant: LG SILTRON INC.
- Applicant Address: KR
- Assignee: SK Siltron Co., Ltd.
- Current Assignee: SK Siltron Co., Ltd.
- Current Assignee Address: KR
- Agency: Lewis Roca Rothgerber Christie LLP
- Priority: KR10-2012-0148906 20121218; KR10-2012-0148907 20121218; KR10-2012-0178908 20121218
- International Application: PCT/KR2013/002291 WO 20130320
- International Announcement: WO2014/098321 WO 20140626
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L21/02 ; H01L29/20 ; H01L29/205 ; H01L29/207 ; H01L33/12 ; H01L33/00
Abstract:
Provided is a semiconductor substrate including a growth substrate, one or more compound semiconductor layers disposed on the growth substrate, and one or more control layers disposed between the compound semiconductor layers. Each control layer includes multiple nitride semiconductor layers including at least Al.
Public/Granted literature
- US20150332918A1 SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2015-11-19
Information query
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