Invention Grant
- Patent Title: Semiconductor device, correction method in semiconductor device, and correction method of camera module
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Application No.: US16054664Application Date: 2018-08-03
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Publication No.: US10257419B2Publication Date: 2019-04-09
- Inventor: Toru Kitano
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC.
- Priority: JP2015-030538 20150219
- Main IPC: H04N5/232
- IPC: H04N5/232 ; G02B27/64 ; G01C19/00 ; G01C19/56 ; G01P15/00

Abstract:
A gyro sensor includes a first register that stores angular velocity information; a second register that stores sensitivity deviation information of the angular velocity information stored in the first register; a serial communication circuit; and a control circuit that selects the first register or the second register in accordance with designation information supplied through the serial communication circuit. When the first register is selected by the control circuit, the angular velocity information stored in the first register is output through the serial communication circuit, and when the second register is selected by the control circuit, the sensitivity deviation information stored in the second register is output through the serial communication circuit.
Public/Granted literature
- US20180343392A1 SEMICONDUCTOR DEVICE, CORRECTION METHOD IN SEMICONDUCTOR DEVICE, AND CORRECTION METHOD OF CAMERA MODULE Public/Granted day:2018-11-29
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