Invention Grant
- Patent Title: High purity metallic top coat for semiconductor manufacturing components
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Application No.: US15847240Application Date: 2017-12-19
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Publication No.: US10260160B2Publication Date: 2019-04-16
- Inventor: Jennifer Y. Sun , Vahid Firouzdor
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Lowenstein Sandler LLP
- Main IPC: C25D11/34
- IPC: C25D11/34 ; C25D11/04 ; C25D11/16 ; C25D11/18 ; C25D11/26 ; C23C24/04 ; C23C28/00

Abstract:
A component for a manufacturing chamber comprises a coating and an anodization layer on the coating. The anodization layer has a thickness of about 2-10 mil. The anodization layer comprises a low porosity bottom layer portion having a porosity that is less than about 40-50% and a porous columnar top layer portion having a porosity of about 40-40% and comprising a plurality of columnar nanopores having a diameter of about 10-50 nm.
Public/Granted literature
- US20180105938A1 HIGH PURITY METALLIC TOP COAT FOR SEMICONDUCTOR MANUFACTURING COMPONENTS Public/Granted day:2018-04-19
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