Invention Grant
- Patent Title: Insulated gate bipolar transistor (IGBT) temperature sense circuit for automatically calibrating temperature sense of diode
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Application No.: US15270524Application Date: 2016-09-20
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Publication No.: US10260967B2Publication Date: 2019-04-16
- Inventor: Ji Woong Jang , Ki Jong Lee , Kang Ho Jeong , Ki Young Jang , Sang Cheol Shin
- Applicant: Hyundai Motor Company
- Applicant Address: KR Seoul
- Assignee: Hyundai Motor Company
- Current Assignee: Hyundai Motor Company
- Current Assignee Address: KR Seoul
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless
- Priority: KR10-2016-0082873 20160630
- Main IPC: G01K15/00
- IPC: G01K15/00 ; G01K7/01

Abstract:
An IGBT temperature sense circuit is provided. The IGBT temperature sense circuit automatically calibrates a temperature sense of a diode to minimize an error based on element characteristics of a temperature sense diode, precisely senses the temperature and removes a limit of a maximum current (to increase the maximum current) of an output of an IGBT. A temperature sense circuit includes an automatic calibrator that is configured to supply current of a current source to a current to a diode and a diode temperature sensor that is configured to measure a voltage of one side terminal of the diode based on the current of the diode based on a change of a temperature and adjustment of an operation of a protection object device.
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