Invention Grant
- Patent Title: Semiconductor differential pressure sensor and manufacturing method of the same
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Application No.: US15443270Application Date: 2017-02-27
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Publication No.: US10260976B2Publication Date: 2019-04-16
- Inventor: Eiji Yoshikawa
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Agent Richard C. Turner
- Priority: JP2016-214079 20161101
- Main IPC: B81B3/00
- IPC: B81B3/00 ; B81C1/00 ; G01L9/00 ; G01L19/04

Abstract:
A semiconductor differential pressure sensor element is such that as strain sensitive elements are disposed only inside a diaphragm, and strain relaxation grooves are provided along the diaphragm, it is difficult for thermal stress caused by expansion or contraction of a case to propagate to the strain sensitive elements, thus suppressing characteristic fluctuations resulting from a change in external temperature. Also, as a configuration is such that a sacrificial column is provided inside a depressed portion, and that the diaphragm is held by the sacrificial column in a diaphragm formation step which thins a second semiconductor substrate and a functional element formation step which repeatedly implements a cleaning step, breakage of the diaphragm can be prevented, thus achieving a significant improvement in yield.
Public/Granted literature
- US20180120184A1 SEMICONDUCTOR DIFFERENTIAL PRESSURE SENSOR AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2018-05-03
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