- Patent Title: Probe guide plate having a silicon oxide layer formed on surfaces and on an inner wall of a through hole thereof, and a protective insulating layer formed on the silicon oxide layer, and probe apparatus including the probe guide plate
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Application No.: US15356868Application Date: 2016-11-21
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Publication No.: US10261110B2Publication Date: 2019-04-16
- Inventor: Yuichiro Shimizu , Kosuke Fujihara , Tomoo Yamasaki , Chikaomi Mori
- Applicant: SHINKO ELECTRIC INDUSTRIES CO., LTD. , JAPAN ELECTRONIC MATERIALS CORPORATION
- Applicant Address: JP Nagano-Shi JP Amagasaki-Shi
- Assignee: SHINKO ELECTRIC INDUSTRIES CO., LTD.,JAPAN ELECTRONIC MATERIALS CORPORATION
- Current Assignee: SHINKO ELECTRIC INDUSTRIES CO., LTD.,JAPAN ELECTRONIC MATERIALS CORPORATION
- Current Assignee Address: JP Nagano-Shi JP Amagasaki-Shi
- Agency: Rankin, Hill & Clark LLP
- Priority: JP2015-229681 20151125
- Main IPC: G01R31/20
- IPC: G01R31/20 ; G01R1/073 ; G01R31/26

Abstract:
A probe guide plate includes: a silicon substrate including one surface and the other surface opposite to the one surface; a through hole formed through the silicon substrate to extend from the one surface of the silicon substrate to the other surface of the silicon substrate; a silicon oxide layer formed on the one surface of the silicon substrate, the other surface of the silicon substrate, and an inner wall surface of the through hole; and a protective insulating layer formed on the silicon oxide layer. The protective insulating layer is formed on at least one of the one surface and the other surface of the silicon substrate via the silicon oxide layer, and partially formed on the inner wall surface of the through hole via the silicon oxide layer.
Public/Granted literature
- US20170146569A1 PROBE GUIDE PLATE AND PROBE APPARATUS Public/Granted day:2017-05-25
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